Contents

Experiment: ELB 1

Topic: Semiconductor diode, light emitting diode

The electrical properties and possible applications of diodes are analysed using basic circuits with light-emitting diodes and Z-diodes as well as basic rectifier circuits.

Experiment: ELB 2

Topic: Bipolar transistor

The aim of the experiment is to investigate the behaviour and characteristics of

bipolar transistors. The mode of operation as an amplifier and

as a switch. The experiment is based on the following considerations

Transistors from the lecture "Components and basic circuits". The skills

in dealing with measurement technology are deepened.

Experiment: ELB 3

Topic: Operational amplifier

On the basis of tasks relating to the operational amplifier as an amplifier

and switch (comparator), the circuit design and the practical test will be

with the aim of further developing skills and abilities in circuit technology and measurement technology. In this context

The handling of data sheets and analogue circuits is practised.

Experiment: ELB 4

Topic: Power electronic module with IGBT

The centrepiece is a power electronic switch arrangement consisting of: Optocoupler, IGBT driver circuit, IGBT. The following aspects are covered in the experiment: galvanic isolation, IGBT control, IGBT switch operation, circuit losses, SiC components, thermal analysis.